-40%
2SB817 + 2SD1047 Pair Transistors B817 + D1047 PNP+NPN Power 100W 12A 160V USA

2SB817 + 2SD1047 Pair Transistors B817 + D1047 PNP+NPN Power 100W 12A 160V USA

$ 1.91

Availability: 98 in stock
  • All returns accepted: Returns Accepted
  • Refund will be given as: Money Back
  • Emitter-Base/Gate-Drain Voltage: 6 V
  • Function: Power Transistor
  • Item must be returned within: 30 Days
  • MPN: 2SB817
  • Collector-Base/Gate-Source Voltage: 160 V
  • Continuous Collector/Drain Current: 12 A
  • Return shipping will be paid by: Seller
  • Modified Item: No
  • Collector-Emitter/Drain-Source Voltage: 160 V
  • Power Dissipation: 100 W
  • Country/Region of Manufacture: Unknown
  • Brand: SANYO
  • Condition: New
  • Custom Bundle: No
  • Transistor Type: NPN PNP
  • Model: 2SB817 + 2SD1047

    Description

    2SD1047
    Material of Transistor: Si
    Polarity: NPN
    Maximum Collector Power Dissipation (Pc): 100 W
    Maximum Collector-Base Voltage |Vcb|: 160 V
    Maximum Collector-Emitter Voltage |Vce|: 140 V
    Maximum Emitter-Base Voltage |Veb|: 6 V
    Maximum Collector Current |Ic max|: 12 A
    Max. Operating Junction Temperature (Tj): 150 °C
    Transition Frequency (ft): 15 MHz
    Collector Capacitance (Cc): 210 pF
    Forward Current Transfer Ratio (hFE), MIN: 60
    2SB817
    Material of Transistor: Si
    Polarity: PNP
    Maximum Collector Power Dissipation (Pc): 100 W
    Maximum Collector-Base Voltage |Vcb|: 160 V
    Maximum Collector-Emitter Voltage |Vce|: 160 V
    Maximum Emitter-Base Voltage |Veb|: 6 V
    Maximum Collector Current |Ic max|: 12 A
    Max. Operating Junction Temperature (Tj): 150 °C
    Transition Frequency (ft): 7.5 MHz
    Collector Capacitance (Cc): 300 pF
    Forward Current Transfer Ratio (hFE), MIN: 60
    Package TO-3P
    Package Included:
    2SB817 + 2SD1047 Pair Transistors B817 + D1047 PNP+NPN Power 100W 12A 160V